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hammer mills chip germanium sheet ge

Oct , sheet resistances of a nm thick sb doped ge layer in dependence of growth temperature the ge rate was s and the antimony flux cm s at growth temperatures higher than c the sheet resistance increases the doping concentration decreases dramatically because of the large segregation of sb in ge

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  • Molecular beam epitaxy of highly antimony doped germanium

    Molecular beam epitaxy of highly antimony doped germanium

    Oct , sheet resistances of a nm thick sb doped ge layer in dependence of growth temperature the ge rate was s and the antimony flux cm s at growth temperatures higher than c the sheet resistance increases the doping concentration decreases dramatically because of the large segregation of sb in ge

    Read More
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    Sep , figure b shows the enlarged gege st peak, from which a clear peak shift towards higher wavenumber with increasing gesn thickness is observed comparing the gege

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  • Molecular beam epitaxy of highly antimony doped germanium

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    Oct , sheet resistances of a nm thick sb doped ge layer in dependence of growth temperature the ge rate was s and the antimony flux cm s at growth temperatures higher than c the sheet resistance increases the doping concentration decreases dramatically because of the large segregation of sb in ge

    Read More